WIYN / Bench Upgrade: CCD Design Requirements

QE

	350nm	400nm	450nm	550nm	650nm	750nm	850nm	950nm
current-device:	38	62.5	68	77.5	80	75	52.5	22.5
requirement:	50	75	80	90	85	80	75	50
goal:	60	80	90	95	95	90	85	65

Read-Noise

current-device: 4.3 e- rms (manual); 5 e- rms (measured) at roughly 30 musec/pix and gain = 1.7e-/DN
requirement: < 3 e- rms (binned 4x2)
goal: < 2 e- rms

Pixels

Size
current-device: 24x24 microns
requirement: 9-16 microns, square
goal: 12x12 microns

Fill
current-device: ???
requirement: > 99%
goal: 100%

Array size

current-device: 49.1 mm x 49.1 mm physical; 49.1 mm x 28.8 mm used
requirement: 49.1 mm x 26.4 mm (4092 x 2200 pixels at 12 microns / pix )
goal: 50mm x 30mm

Flatness

current-device: ??? (ASK CHARLES HARMER ABOUT ALL OF THESE)
requirement: ???
goal: ????

Cosmetics

Column defects (black or white):
current-device: 2
requirement: 1
goal: 0

White spots:
current-device: ???
requirement: < 500 (per 4098x2048)
goal: < 50

Total spoits (black or white):
current-device:
requirement: < 1000 (per 4098x2048)
goal: < 50

Traps:
current-device: ???
requirement: < 10
goal: < 2

Well depth

current-device: approx 111k e-/pix
requirement: 100k e-/pix
goal: 100 e-/pix

Linearity

current-device: ???
requirement: 0.5% to half-well
goal: 0.1% to half-well

Blooming

current-device: ???
requirement: N/A
goal: N/A

Electronics

Read-Time
current-device: roughly 2 minutes, 1 amplifier (30 musec/pix and gain = 1.7e-/DN)
requirement: < 30 sec (e.g,. 7 microsec, 2 amplifiers)
goal: 15 sec

On-chip binning
current-device: ???
requirement: 5x3
goal: 10x6

RF pick-up
current-device: 1e- rms
requirement: < 0.5e-
goal: < 0.2e- rms

Amplifier Hysteresis (under count on down-stream side of full pixels)
current-device: ???
requirement: < 3e-
goal: < 1e-

Ghosting and amplifier crosstalk (e.g., effects seen in MiniMo and Mosaic)
current-device:
requirement: < 0.1%
goal: < 0.01%